Electronic and Structural Properties of Pentacene at Organic/inorganic Interfaces

Electronic and Structural Properties of Pentacene at Organic/inorganic Interfaces

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We studied the electrical properties of rubrene thin films deposited on SiO2 and polystyrene. Rubrene thin film transistors showed very low field effect mobilities on SiO2. Enhanced mobilities on polystyrene were related to the structural properties of rubrene at the interface between rubrene and the gate dielectrics. Both electron and hole conduction was observed in the devices.In OFETs, charge carriers at the interface between the gate dielectric and the semiconductor layer are responsible for the conduction through the device. Fig. 1.2(a) shows an energy band diagram for a metal-oxide-semiconductor (MOS)anbsp;...


Title:Electronic and Structural Properties of Pentacene at Organic/inorganic Interfaces
Author: Byoungnam Park
Publisher:ProQuest - 2008
ISBN-13:

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