Semiconductor Physical Electronics

Semiconductor Physical Electronics

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The purpose of this book is to provide the reader with a self-contained treatment of fundamen tal solid state and semiconductor device physics. The material presented in the text is based upon the lecture notes of a one-year graduate course sequence taught by this author for many years in the AmDepartment of Electrical Engineering of the University of Florida. It is intended as an introductory textbook for graduate students in electrical engineering. However, many students from other disciplines and backgrounds such as chemical engineering, materials science, and physics have also taken this course sequence, and will be interested in the material presented herein. This book may also serve as a general reference for device engineers in the semiconductor industry. The present volume covers a wide variety of topics on basic solid state physics and physical principles of various semiconductor devices. The main subjects covered include crystal structures, lattice dynamics, semiconductor statistics, energy band theory, excess carrier phenomena and recombination mechanisms, carrier transport and scattering mechanisms, optical properties, photoelectric effects, metal-semiconductor devices, the p--n junction diode, bipolar junction transistor, MOS devices, photonic devices, quantum effect devices, and high speed III-V semiconductor devices. The text presents a unified and balanced treatment of the physics of semiconductor materials and devices. It is intended to provide physicists and mat erials scientists with more device backgrounds, and device engineers with a broader knowledge of fundamental solid state physics.obtained; (iii) for a#39;Ha#39;s agt; V, - 0, the depletion of holes results, with the band bending downward; and (iv) for a#39;Pa#39;, - a#39;Ia#39;s, an inversion region is created near the surface, ... The energy band diagram for an ideal MOS device formed on a p-type silicon substrate is shown in Fig. 14.3b for V -agt; 0. The charge distributions in the bulk semiconductor and across the metala€“oxide and oxidea€“semiconductor interfaces are.


Title:Semiconductor Physical Electronics
Author: Sheng S. Li
Publisher:Springer Science & Business Media - 2012-12-06
ISBN-13:

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